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| Power Transistors 2SD1742, 2SD1742A Silicon NPN triple diffusion planar type For low-freauency power amplification Complementary to 2SB1172 and 2SB1172A Unit: mm 7.00.3 3.00.2 3.50.2 0.80.2 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 60 80 60 80 6 5 3 15 1.3 150 -55 to +150 Unit V 7.20.3 1.10.1 1.00.2 10.0 -0. +0.3 0.850.1 0.40.1 0.750.1 2.30.2 4.60.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1742 2SD1742A 2SD1742 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.50.2 2.00.2 7.00.3 Unit: mm 0 to 0.15 emitter voltage 2SD1742A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 10.20.3 7.20.3 V A A 3.00.2 1.0 max. 2.5 0.750.1 0.5 max. 0.90.1 0 to 0.15 W C C 1.10.1 1 2 3 2.30.2 4.60.4 s Electrical Characteristics (TC=25C) Parameter Symbol ICES ICEO IEBO 2SD1742 2SD1742A VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf Conditions VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.5 2.5 0.4 60 80 70 10 min typ 2SD1742 2SD1742A 2SD1742 2SD1742A 1:Base 2:Collector 3:Emitter I Type Package (Y) max 200 200 300 300 1 Unit A A mA V Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 250 1.8 1.2 V V MHz s s s Rank classification Q 70 to 150 P 120 to 250 Rank hFE1 2.50.2 1.0 2.50.2 1.0 1 Power Transistors PC -- Ta 20 5 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 2SD1742, 2SD1742A IC -- VCE 8 VCE=4V 7 25C 6 5 4 3 2 1 0 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 TC=100C -25C IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 15 (1) IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 30mA 20mA 1 10mA 3 10 2 5 (2) 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) 4 Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=8 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 -25C TC=100C 25C 10000 hFE -- IC 10000 VCE=4V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=10V f=10MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C -25C 25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 1 ICP IC 300ms 102 t=10ms 1ms (1) (2) 10 1 2SD1742A 2SD1742 3 10 30 100 300 1000 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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